CEF02N9 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEF02N9

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.8 Ohm

Encapsulados: TO220F

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CEF02N9 datasheet

 ..1. Size:391K  cet
 cep02n9 ceb02n9 cef02n9.pdf pdf_icon

CEF02N9

CEP02N9/CEB02N9 CEF02N9 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8 2.6A 10V CEB02N9 900V 6.8 2.6A 10V CEF02N9 900V 6.8 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES

 8.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEF02N9

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S

 8.2. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEF02N9

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

 8.3. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEF02N9

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

MOSTRAR MÁS

Otros transistores... CEB07N65, CEB07N65A, CEB07N7, CEF02N65A, CEF02N65G, CEF02N6A, CEF02N6G, CEF02N7G, IRFB4115, CEF03N8, CEF04N6, CEF04N65, CEF04N7G, CEF05N65, CEF06N7, CEF07N65, CEF07N65A