CEP16N10L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP16N10L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.8 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm

Encapsulados: TO220

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CEP16N10L datasheet

 ..1. Size:645K  cet
 cep16n10l ceb16n10l.pdf pdf_icon

CEP16N10L

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MA

 6.1. Size:534K  cet
 cep16n10 ceb16n10.pdf pdf_icon

CEP16N10L

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 8.1. Size:335K  ncepower
 ncep16n85ak.pdf pdf_icon

CEP16N10L

NCEP16N85AK http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency

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