CEP13N5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP13N5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de CEP13N5 MOSFET

- Selecciónⓘ de transistores por parámetros

 

CEP13N5 datasheet

 ..1. Size:412K  cet
 cep13n5 ceb13n5 cef13n5.pdf pdf_icon

CEP13N5

CEP13N5/CEB13N5 CEF13N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5 500V 0.48 13A 10V CEB13N5 500V 0.48 13A 10V CEF13N5 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES

 0.1. Size:435K  cet
 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEP13N5

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48 13A 10V CEB13N5A 500V 0.48 13A 10V CEF13N5A 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C

 8.1. Size:348K  cet
 cep13n10 ceb13n10.pdf pdf_icon

CEP13N5

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 8.2. Size:657K  cet
 cep13n10l ceb13n10l.pdf pdf_icon

CEP13N5

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... CEB13N10L, CEP13N10L, CEB13N10, CEP13N10, CEB14N5, CEF14N5, CEP14N5, CEB13N5, P60NF06, CEB12N5, CEF12N5, CEF13N5, CEP12N5, CEB12N6, CEF12N6, CEP12N6, CEP10N4