CEP10N6 Datasheet. Equivalente

 ..1. Size:420K  cet
 cep10n6 ceb10n6 cef10n6.pdf

CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N6 600V 0.75 10A 10V CEB10N6 600V 0.75 10A 10V CEF10N6 600V 0.75 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PA

 0.1. Size:385K  cet
 cep10n65 ceb10n65 cef10n65.pdf

CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85 10A 10V CEB10N65 650V 0.85 10A 10V CEF10N65 650V 0.85 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CE

 8.1. Size:109K  cet
 cep10n4 ceb10n4 cei10n4 cef10n4.pdf

CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N4 450V 0.7 10A 10V CEB10N4 450V 0.7 10A 10V CEI10N4 450V 0.7 10A 10V CEF10N4 450V 0.7 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO

 8.2. Size:320K  ncepower
 ncep10n85aq.pdf

http //www.ncepower.com NCEP10N85AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss

 8.3. Size:417K  ncepower
 ncep10n12 ncep10n12d.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 8.4. Size:729K  ncepower
 ncep10n12ak.pdf

NCEP10N12AK NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =9m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

 8.5. Size:937K  ncepower
 ncep10n12k.pdf

NCEP10N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =8.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

 8.6. Size:409K  ncepower
 ncep10n12g.pdf

NCEP10N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 8.7. Size:417K  ncepower
 ncep10n12.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 8.8. Size:417K  ncepower
 ncep10n12d.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 8.9. Size:329K  ncepower
 ncep10n85ag.pdf

http //www.ncepower.com NCEP10N85AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss