CEP09N7G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEP09N7G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 166 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9 nS
Cossⓘ - Capacitancia de salida: 200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de CEP09N7G MOSFET
- Selecciónⓘ de transistores por parámetros
CEP09N7G datasheet
..1. Size:419K cet
cep09n7g ceb09n7g cef09n7g.pdf 
CEP09N7G/CEB09N7G CEF09N7G PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP09N7G 700V 1 9A 10V CEB09N7G 700V 1 9A 10V CEF09N7G 700V 1 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-26
9.1. Size:782K ncepower
ncep090n20t.pdf
NCEP090N20T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =200V,I =125A DS D switching performance. Both conduction and switching power R =7.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati
9.2. Size:331K ncepower
ncep090n85gu.pdf
http //www.ncepower.com NCEP090N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
9.3. Size:1292K ncepower
ncep090n20 ncep090n20d.pdf
NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1
9.4. Size:881K ncepower
ncep090n85qu.pdf
Pb Free Product http //www.ncepower.com NCEP090N85QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85QU uses Super Trench II technology that is V =85V,I =56A DS D uniquely optimized to provide the most efficient high frequency R =8.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
9.5. Size:297K ncepower
ncep090n85a.pdf
http //www.ncepower.com NCEP090N85A NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
9.6. Size:706K ncepower
ncep090n85aqu.pdf
http //www.ncepower.com NCEP090N85AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AQU uses Super Trench II technology that V =85V,I =56A DS D is uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5V DS(ON) GS switching
9.7. Size:367K ncepower
ncep092n10as.pdf
NCEP092N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =14A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.4m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical@ VGS=4.5V losses are minimize
9.8. Size:332K ncepower
ncep095n10ag.pdf
NCEP095N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.5m , typical@ VGS=4.5V losses are mi
9.9. Size:329K ncepower
ncep090n85agu.pdf
http //www.ncepower.com NCEP090N85AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
9.10. Size:302K ncepower
ncep095n10.pdf
NCEP095N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
9.11. Size:334K ncepower
ncep090n10gu.pdf
NCEP090N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati
9.12. Size:1292K ncepower
ncep090n20d.pdf
NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1
9.13. Size:340K ncepower
ncep090n12agu.pdf
NCEP090N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are
9.14. Size:683K ncepower
ncep095n10a.pdf
NCEP095N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =9m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =11m , typical@ V =4.5V DS(ON) GS losses are minimi
9.15. Size:333K ncepower
ncep090n10agu.pdf
NCEP090N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min
9.16. Size:1292K ncepower
ncep090n20.pdf
NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1
Otros transistores... CEB10N4, CEI10N4, CEF10N4, CEB10N6, CEF10N6, CEP10N6, CEB09N7G, CEF09N7G, MMIS60R580P, CEB08N6A, CEF08N6A, CEP08N6A, CEF1186, CEB1186, CEP1186, CEB1195, CEF1195
