CEP08N6A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEP08N6A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de CEP08N6A MOSFET
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CEP08N6A datasheet
..1. Size:375K cet
cep08n6a ceb08n6a cef08n6a.pdf 
CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25 7.5A 10V CEB08N6A 600V 1.25 7.5A 10V CEF08N6A 600V 1.25 7.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE
8.1. Size:434K cet
cep08n8 ceb08n8 cef08n8.pdf
CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N8 800V 1.55 8A 10V CEB08N8 800V 1.55 8A 10V CEF08N8 800V 1.55 8A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES
9.1. Size:299K ncepower
ncep080n85ak.pdf
NCEP080N85AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.1m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical @ VGS=4.5V losses are minimiz
9.2. Size:448K ncepower
ncep082n10as.pdf
NCEP082N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =20A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.4m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=4.5V losses are m
9.3. Size:299K ncepower
ncep080n85k.pdf
NCEP080N85K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =75A switching performance. Both conduction and switching power RDS(ON)=8.2m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
9.4. Size:395K ncepower
ncep080n10f.pdf
NCEP080N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low
9.5. Size:355K ncepower
ncep080n12g.pdf
NCEP080N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati
9.6. Size:290K ncepower
ncep080n12i.pdf
NCEP080N12I NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati
9.7. Size:367K ncepower
ncep085n10as.pdf
http //www.ncepower.com NCEP085N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP085N10AS uses Super Trench II technology that is VDS =100V,ID =17A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m (typical) @ VGS=4.5V l
9.8. Size:737K ncepower
ncep088nh150gu.pdf
NCEP088NH150GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP088NH150GU uses Super Trench III technology V =150V,I =96.5A DS D that is uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM
9.9. Size:334K ncepower
ncep080n12 ncep080n12d.pdf
NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263
9.10. Size:334K ncepower
ncep080n12d.pdf
NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263
9.11. Size:299K ncepower
ncep080n85.pdf
NCEP080N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =80A switching performance. Both conduction and switching power RDS(ON)=7.5m , typical @ VGS=10V losses are minimized due to an extremely low combination
9.12. Size:434K ncepower
ncep080n10.pdf
NCEP080N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
9.13. Size:334K ncepower
ncep080n12.pdf
NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263
9.14. Size:367K ncepower
ncep080n10a.pdf
NCEP080N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =78A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-220)@ VGS=4.5V
Otros transistores... CEB10N6, CEF10N6, CEP10N6, CEB09N7G, CEF09N7G, CEP09N7G, CEB08N6A, CEF08N6A, 60N06, CEF1186, CEB1186, CEP1186, CEB1195, CEF1195, CEP1195, CEB21A2, CEB3060
