CEB3060 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEB3060
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO263

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CEB3060 Datasheet (PDF)

..1. Size:408K cet
cep3060 ceb3060.pdf

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

9.1. Size:415K cet
cep30n15l ceb30n15l.pdf

CEP30N15L/CEB30N15LN-Channel Enhancement Mode Field Effect Transistor FEATURES150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS T

9.2. Size:362K cet
ceb30n3 cef30n3 cep30n3.pdf

CEP30N3/CEB30N3CEF30N3N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP30N3 300V 110m 30A 10VCEB30N3 300V 110m 30A 10VCEF30N3 300V 110m 30A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIES CEP SERIES CEF SERI

9.3. Size:394K cet
cep30p03 ceb30p03.pdf

CEP30P03/CEB30P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -30A, RDS(ON) =32m @VGS = -10V.RDS(ON) =50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

9.4. Size:814K ncepower
nceb301q.pdf

http://www.ncepower.com NCEB301Q30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEB301Q is designed to provide a high efficiencysynchronous buck power stage with optimal layout andboard space utilization. It includes two specialized MOSFETsin a dual Power DFN3X3 package. The Q1 "High Side"MOSFET is desgined to minimze switching losses. The Schematic Dia

9.5. Size:474K ncepower
nceb301g.pdf

Pb Free Producthttp://www.ncepower.com NCEB301G30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching lo

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