CEB30N15L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB30N15L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO263

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CEB30N15L datasheet

 ..1. Size:415K  cet
 cep30n15l ceb30n15l.pdf pdf_icon

CEB30N15L

CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS T

 8.1. Size:362K  cet
 ceb30n3 cef30n3 cep30n3.pdf pdf_icon

CEB30N15L

CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP30N3 300V 110m 30A 10V CEB30N3 300V 110m 30A 10V CEF30N3 300V 110m 30A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERI

 9.1. Size:408K  cet
 cep3060 ceb3060.pdf pdf_icon

CEB30N15L

CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25

 9.2. Size:394K  cet
 cep30p03 ceb30p03.pdf pdf_icon

CEB30N15L

CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32m @VGS = -10V. RDS(ON) =50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc

MOSTRAR MÁS

Otros transistores... CEF1186, CEB1186, CEP1186, CEB1195, CEF1195, CEP1195, CEB21A2, CEB3060, IRF540N, CEB3120, CEB3205, CEB4060A, CEB4060AL, CEB45N10, CEB50N10, CEB540L, CEB540N