CEB60N06G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB60N06G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 495 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de CEB60N06G MOSFET
CEB60N06G Datasheet (PDF)
cep60n06g ceb60n06g.pdf

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
cep60n10 ceb60n10.pdf

CEP60N10/CEB60N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 57A, RDS(ON) = 24m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
cep6060l ceb6060l.pdf

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc =
cep6060n ceb6060n.pdf

CEP6060N/CEB6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 42A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa
Otros transistores... CEB540L , CEB540N , CEB6036 , CEB6042 , CEB6056 , CEB6060L , CEB6060N , CEB6086L , IRFB4110 , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 .
History: CEB20P06 | AOB470L | HM7N65 | CEB6060L | HGI120N10AL | PJM2302NSA | KP743A1
History: CEB20P06 | AOB470L | HM7N65 | CEB6060L | HGI120N10AL | PJM2302NSA | KP743A1



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