CEB60N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEB60N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET CEB60N10

CEB60N10 Datasheet (PDF)

..1. Size:381K cet
cep60n10 ceb60n10.pdf

CEP60N10/CEB60N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 57A, RDS(ON) = 24m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

8.1. Size:609K cet
cep60n06g ceb60n06g.pdf

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

9.1. Size:399K cet
cep6060l ceb6060l.pdf

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc =

9.2. Size:420K cet
cep6060n ceb6060n.pdf

CEP6060N/CEB6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 42A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

9.3. Size:520K cet
cep603al ceb603al.pdf

9.4. Size:434K cet
cep6086l ceb6086l.pdf

CEP6086L/CEB6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE

9.5. Size:82K cet
cep6030l ceb6030l.pdf

CEP6030L/CEB6030LN-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc

9.6. Size:418K cet
cep6086 ceb6086.pdf

CEP6086/CEB6086N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 70A, RDS(ON) = 9.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPar

9.7. Size:421K cet
cep6042 ceb6042.pdf

CEP6042/CEB6042N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 118A, RDS(ON) = 5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

9.8. Size:629K cet
cep6056 ceb6056.pdf

CEP6056/CEB6056N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 100A, RDS(ON) = 6.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

9.9. Size:421K cet
cep6036 ceb6036.pdf

CEP6036/CEB6036N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 135A, RDS(ON) = 4.6m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot

9.10. Size:357K inchange semiconductor
ceb6086.pdf

isc N-Channel MOSFET Transistor CEB6086FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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