CEB60N10 Todos los transistores

 

CEB60N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEB60N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO263
 

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CEB60N10 Datasheet (PDF)

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 cep60n10 ceb60n10.pdf pdf_icon

CEB60N10

CEP60N10/CEB60N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 57A, RDS(ON) = 24m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 8.1. Size:609K  cet
 cep60n06g ceb60n06g.pdf pdf_icon

CEB60N10

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 9.1. Size:399K  cet
 cep6060l ceb6060l.pdf pdf_icon

CEB60N10

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc =

 9.2. Size:420K  cet
 cep6060n ceb6060n.pdf pdf_icon

CEB60N10

CEP6060N/CEB6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 42A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

MOSTRAR MÁS

Otros transistores... CEB540N , CEB6036 , CEB6042 , CEB6056 , CEB6060L , CEB6060N , CEB6086L , CEB60N06G , IRFP250N , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 , CEP4060A .

History: IXFV18N60PS | CEP3120 | NTD4805N-1G | FQA90N10V2 | SSM6P39TU | APM4532 | AON6758

 

 
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