CEP4060A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEP4060A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 47 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 115 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET CEP4060A
CEP4060A Datasheet (PDF)
cep4060a ceb4060a.pdf
CEP4060A/CEB4060AN-Channel Enhancement Mode Field Effect Transistor FEATURES60V, 17A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
cep4060al ceb4060al.pdf
CEP4060AL/CEB4060ALN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc
ncep4060eq.pdf
Pb Free Producthttp://www.ncepower.com NCEP4060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP4060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep4065qu.pdf
http://www.ncepower.com NCEP4065QUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4065QU uses Super Trench technology that is VDS =40V,ID =65A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losse
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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