CEP4060A Todos los transistores

 ..1. Size:399K  cet
 cep4060a ceb4060a.pdf

CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 0.1. Size:401K  cet
 cep4060al ceb4060al.pdf

CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc

 7.1. Size:345K  ncepower
 ncep4060eq.pdf

Pb Free Product http //www.ncepower.com NCEP4060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP4060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.1. Size:300K  ncepower
 ncep4065qu.pdf

http //www.ncepower.com NCEP4065QU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4065QU uses Super Trench technology that is VDS =40V,ID =65A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losse