CEP6086L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP6086L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 72 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO220

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CEP6086L datasheet

 ..1. Size:434K  cet
 cep6086l ceb6086l.pdf pdf_icon

CEP6086L

CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE

 7.1. Size:418K  cet
 cep6086 ceb6086.pdf pdf_icon

CEP6086L

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

 8.1. Size:493K  ncepower
 ncep6080ag.pdf pdf_icon

CEP6086L

Pb Free Product http //www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.2. Size:412K  ncepower
 ncep6080g.pdf pdf_icon

CEP6086L

Pb Free Product http //www.ncepower.com NCEP6080G NCE N-Channel Super Trench Power MOSFET Description The NCEP6080G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

MOSTRAR MÁS

Otros transistores... CEP540L, CEP540N, CEP6036, CEP6042, CEP6056, CEP6060L, CEP6060N, CEP6086, SKD502T, CEP60N06G, CEP60N10, CEP6186, CEF630N, CEF730G, CEF740A, CEF740G, CEF80N15