FDC637AN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDC637AN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDC637AN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SUPERSOT6

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FDC637AN datasheet

..1. Size:66K fairchild semi
fdc637an.pdf pdf_icon

November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 V to minimize on-state resistance and yet maintain lo

..2. Size:365K onsemi
fdc637an.pdf pdf_icon

FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 V using ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 V to minimize on-state resistance and yet maintain low gate charge for

..3. Size:912K cn vbsemi
fdc637an.pdf pdf_icon

FDC637AN www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC

8.1. Size:415K fairchild semi
fdc637bnz.pdf pdf_icon

September 2007 FDC637BNZ tm N-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24m Features General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2A that has been especially tailored to minimize the on-sta

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