FDC640P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2001FDC640PP-Channel 2.5V PowerTrench Specified MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 4.5 A, 20 V RDS(ON) = 0.053 @ VGS = 4.5 Vgate version of Fairchilds advanced PowerTrenchRDS(ON) = 0.080 @ VGS = 2.5 Vprocess. It has been optimized for power managementapplications with a wide r

January 2001FDC640PP-Channel 2.5V PowerTrench Specified MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 4.5 A, 20 V RDS(ON) = 0.053 @ VGS = 4.5 Vgate version of Fairchilds advanced PowerTrenchRDS(ON) = 0.080 @ VGS = 2.5 Vprocess. It has been optimized for power managementapplications with a wide r

October 2001FDC6401NDual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Dual N-Channel MOSFET has been designed 3.0 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 95 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimiz

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 5.5 A, 30 V. RDS(ON) = 30 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 26 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 5.5 A, 30 V. RDS(ON) = 30 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 26 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

June 2009FDC642P_F085P-Channel PowerTrench MOSFET-20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6

September 2001FDC6420C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 95 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

January 2010FDC642PSingle P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 mFeatures General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 AThis P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 Aespecially tailored to minimize on-state

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET P-Channel,POWERTRENCH-20 V, -4 A, 100 mWFDC642P-F085,FDC642P-F085Pwww.onsemi.comFeatures Typ RDS(on) = 52.5 mW at VGS = -4.5 V, ID = -4 A Typ RDS(on) = 75.3 mW at VGS = -2.5 V, ID = -3.2 A Fast Switching Speed Low Gate Charge (6.9 nC Typical)TSOT23 6-Lead High Performance Trench Technology for Extremely Low RDS(on)CASE 419BL SUPERSOTt-6 P

SMD Type MOSFETP-Channel MOSFETFDC642P (KDC642P)( )SOT-23-6 Unit:mm+0.10.4 -0.16 5 4 Features VDS (V) =-20V ID =-4 A RDS(ON) 65m (VGS =-4.5V)2 31+0.02 RDS(ON) 100m (VGS =-2.5V) 0.15 -0.02+0.01-0.01+0.2-0.1D D61D D52G S43 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vol

FDC6420Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V