CEP84A4 Todos los transistores

 

CEP84A4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP84A4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 71 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 385 pF

Resistencia drenaje-fuente RDS(on): 0.0051 Ohm

Empaquetado / Estuche: TO220

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CEP84A4 Datasheet (PDF)

1.1. cep84a4 ceb84a4.pdf Size:393K _cet

CEP84A4
CEP84A4

CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc

5.1. cep840a ceb840a cef840a.pdf Size:435K _cet

CEP84A4
CEP84A4

CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85Ω 8.5A 10V CEB840A 500V 0.85Ω 8.5A 10V CEF840A 500V 0.85Ω 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF

5.2. cep840l ceb840l cef840l.pdf Size:396K _cet

CEP84A4
CEP84A4

CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

 5.3. cep840g ceb840g cef840g.pdf Size:398K _cet

CEP84A4
CEP84A4

CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-2

Otros transistores... CEP75N10 , CEP80N15 , CEP830G , CEP83A3 , CEP83A3G , CEP840A , CEP840G , CEP840L , IRF8010 , CEP85A3 , CEP85N75 , CEP85N75V , CEP9060N , CEP93A3 , CEBF634 , CEBF640 , CED01N65 .

 

 
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