CEP84A4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEP84A4 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 71 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 385 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
Encapsulados: TO220
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CEP84A4 datasheet
cep84a4 ceb84a4.pdf
CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc
cep840a ceb840a cef840a.pdf
CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85 8.5A 10V CEB840A 500V 0.85 8.5A 10V CEF840A 500V 0.85 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF
cep840l ceb840l cef840l.pdf
CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840L 500V 0.8 8A 10V CEB840L 500V 0.8 8A 10V CEF840L 500V 0.8 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(
cep840g ceb840g cef840g.pdf
CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85 8A 10V CEB840G 500V 0.85 8A 10V CEF840G 500V 0.85 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-2
Otros transistores... CEP75N10, CEP80N15, CEP830G, CEP83A3, CEP83A3G, CEP840A, CEP840G, CEP840L, 3401, CEP85A3, CEP85N75, CEP85N75V, CEP9060N, CEP93A3, CEBF634, CEBF640, CED01N65
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AGM1075D | FQPF3N80 | IXFH60N50P3 | APT8018JN | SSW4668 | APT6M100K | FQPF32N12V2
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