FDC653N Todos los transistores

 

FDC653N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDC653N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SUPERSOT6
 

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FDC653N Datasheet (PDF)

 ..1. Size:76K  fairchild semi
fdc653n.pdf pdf_icon

FDC653N

November 1997 FDC653N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.density, DMOS technology. This very high density process isProprietary SuperSOTTM-6 pac

 ..2. Size:73K  onsemi
fdc653n.pdf pdf_icon

FDC653N

November 1997 FDC653N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.density, DMOS technology. This very high density process isProprietary SuperSOTTM-6 pac

 9.1. Size:114K  fairchild semi
fdc6561an.pdf pdf_icon

FDC653N

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThese N-Channel Logic Level MOSFETs are2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.145 @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Very fas

 9.2. Size:188K  fairchild semi
fdc655an.pdf pdf_icon

FDC653N

June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced using6.3 A, 30 V. RDS(ON) = 0.027 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.035 @ VGS = 4.5 V.that has been especially tailored to minimize on-stateFast switching.resistance and yet main

Otros transistores... FDC6308P , FDC633N , FDC634P , FDC636P , FDC637AN , FDC638P , FDC640P , FDC6506P , STF13NM60N , FDC654P , FDC655AN , FDC6561AN , FDC658P , FDD5202P , FDD5680 , FDD5690 , FDD6030L .

History: STK14N06 | 2SJ306 | SIHG25N50E | FDD5N50NZ | SDD03N04 | SIF7N80C | STK18N05

 

 
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