CEU01N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEU01N65 Datasheet (PDF)

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ceu01n65 ced01n65.pdf pdf_icon

CED01N65/CEU01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

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CED01N65A/CEU01N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.9A, RDS(ON) = 15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

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ced01n6g ceu01n6g.pdf pdf_icon

CED01N6G/CEU01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1A, RDS(ON) = 9.3 @VGS = 10V.High power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.DGDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

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ced01n7 ceu01n7.pdf pdf_icon

CED01N7/CEU01N7N-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 0.8A, RDS(ON) = 18 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

Otros transistores... CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , AON7408 , CEU01N65A , CEU01N6G , CEU01N7 , CEU02N65A , CEU02N65G , CEU02N6A , CEU02N6G , CEU02N7G .