CEU01N6G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEU01N6G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9.3 Ohm

Encapsulados: TO252

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CEU01N6G datasheet

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 ced01n6g ceu01n6g.pdf pdf_icon

CEU01N6G

CED01N6G/CEU01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

 7.1. Size:393K  cet
 ceu01n65a ced01n65a.pdf pdf_icon

CEU01N6G

CED01N65A/CEU01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 7.2. Size:395K  cet
 ceu01n65 ced01n65.pdf pdf_icon

CEU01N6G

CED01N65/CEU01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc =

 8.1. Size:415K  cet
 ced01n7 ceu01n7.pdf pdf_icon

CEU01N6G

CED01N7/CEU01N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

MOSTRAR MÁS

Otros transistores... CED12N10L, CED14G04, CEFF634, CEFF640, CEPF634, CEPF640, CEU01N65, CEU01N65A, IRF9540, CEU01N7, CEU02N65A, CEU02N65G, CEU02N6A, CEU02N6G, CEU02N7G, CEU02N7G-1, CEU02N9