CEU02N65A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEU02N65A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10.5 Ohm

Encapsulados: TO252

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CEU02N65A datasheet

 ..1. Size:416K  cet
 ceu02n65a ced02n65a.pdf pdf_icon

CEU02N65A

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc

 6.1. Size:417K  cet
 ceu02n65g ced02n65g.pdf pdf_icon

CEU02N65A

CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 7.1. Size:417K  cet
 ceu02n6g ced02n6g.pdf pdf_icon

CEU02N65A

CED02N6G/CEU02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 7.2. Size:379K  cet
 ceu02n6a ced02n6a.pdf pdf_icon

CEU02N65A

CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

MOSTRAR MÁS

Otros transistores... CEFF634, CEFF640, CEPF634, CEPF640, CEU01N65, CEU01N65A, CEU01N6G, CEU01N7, 2SK3878, CEU02N65G, CEU02N6A, CEU02N6G, CEU02N7G, CEU02N7G-1, CEU02N9, CEU03N8, CEU04N6