CED4060AL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CED4060AL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: TO251

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CED4060AL datasheet

 ..1. Size:397K  cet
 ceu4060al ced4060al.pdf pdf_icon

CED4060AL

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIM

 ..2. Size:397K  cet
 ced4060al ceu4060al.pdf pdf_icon

CED4060AL

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIM

 6.1. Size:398K  cet
 ced4060a ceu4060a.pdf pdf_icon

CED4060AL

CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

 6.2. Size:398K  cet
 ceu4060a ced4060a.pdf pdf_icon

CED4060AL

CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

MOSTRAR MÁS

Otros transistores... CED21A2, CED25N15L, CED3060, CED3100, CED3120, CED3172, CED3252, CED4060A, BS170, CED40N10, CED4204, CED540L, CED540N, CED55N10, CED6056, CED6060N, CED6086