CEU3120 Todos los transistores

 

CEU3120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEU3120

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 33 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 215 pF

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET CEU3120

 

CEU3120 Datasheet (PDF)

1.1. ceu3120 ced3120.pdf Size:409K _cet

CEU3120
CEU3120

CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15m? @VGS = 10V. RDS(ON) = 22m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATIN

5.1. ceu3172 ced3172.pdf Size:414K _cet

CEU3120
CEU3120

CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20m? @VGS = 10V. RDS(ON) = 32m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

5.2. ceu3100 ced3100.pdf Size:408K _cet

CEU3120
CEU3120

CED3100/CEU3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 51A , RDS(ON) = 10m? @VGS = 10V. RDS(ON) = 17m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M

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