CEU4060A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIM

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIM

CEU4060AL www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters