FDD6670A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD6670A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 66 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO-252

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FDD6670A datasheet

 ..1. Size:109K  fairchild semi
 fdd6670a.pdf pdf_icon

FDD6670A

July 2005 FDD6670A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low ga

 ..2. Size:308K  inchange semiconductor
 fdd6670a.pdf pdf_icon

FDD6670A

isc N-Channel MOSFET Transistor FDD6670A FEATURES Drain Current I =66A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 0.1. Size:147K  fairchild semi
 fdd6670al.pdf pdf_icon

FDD6670A

May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate c

 0.2. Size:105K  fairchild semi
 fdd6670as.pdf pdf_icon

FDD6670A

May 2005 FDD6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670AS is designed to replace a single 76 A, 30 V RDS(ON) max= 8.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 10.4 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

MOSTRAR MÁS

Otros transistores... FDC655AN, FDC6561AN, FDC658P, FDD5202P, FDD5680, FDD5690, FDD6030L, FDD6612A, IRF520, FDD6680, FDD6680A, FDD6690A, AS3402, FDG311N, FDG312P, FDG313N, FDG314P