CED830G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CED830G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO251

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CED830G datasheet

 ..1. Size:394K  cet
 ceu830g ced830g.pdf pdf_icon

CED830G

CED830G/CEU830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 4.5A, RDS(ON) = 1.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25

 9.1. Size:380K  cet
 ced83a3g ceu83a3g.pdf pdf_icon

CED830G

CED83A3G/CEU83A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX

 9.2. Size:393K  cet
 ceu83a3g ced83a3g.pdf pdf_icon

CED830G

CED83A3G/CEU83A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX

 9.3. Size:234K  cet
 ceu83a3 ced83a3.pdf pdf_icon

CED830G

CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM R

MOSTRAR MÁS

Otros transistores... CEU84A4, CEU85A3, CEU93A3, CEUF634, CEUF640, CED73A3G, CED740A, CED75A3, IRFB4110, CED83A3, CED83A3G, CED840A, CED84A4, CED85A3, CED93A3, CEDF634, CEDF640