CEM3060 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3060

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm

Encapsulados: SO8

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CEM3060 datasheet

 ..1. Size:418K  cet
 cem3060.pdf pdf_icon

CEM3060

CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

 9.1. Size:617K  cet
 cem3083.pdf pdf_icon

CEM3060

CEM3083 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

 9.2. Size:385K  cet
 cem3053.pdf pdf_icon

CEM3060

CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. ESD Protected 4000 V SO-8 1 2 3 4 1 S S S G ABSOLUT

 9.3. Size:618K  cet
 cem3032.pdf pdf_icon

CEM3060

CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un

MOSTRAR MÁS

Otros transistores... CEM0410, CEM0415, CEM1010, CEM2182, CEM2539A, CEM26138, CEM2939, CEM3032, 5N65, CEM3109, CEM3120, CEA3252, CEB10N65, CEB12N65, CEC8218, CEF05N6, CEF10N65