CEM3128 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CEM3128
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 14.8 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET CEM3128

CEM3128 Datasheet (PDF)

..1. Size:273K cet
cem3128.pdf

CEM3128Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 9A, RDS(ON) = 16m @VGS = 10V. RDS(ON) = 23m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

..2. Size:882K cn vbsemi
cem3128.pdf

CEM3128www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

8.1. Size:387K cet
cem3120.pdf

CEM3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 10A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

9.1. Size:505K cet
cem3138.pdf

CEM3138Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 9.1A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V.30V, 6.9A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mount Pac

9.2. Size:615K cet
cem3109.pdf

CEM3109Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARYFEATURES30V, 10A, RDS(ON) = 14m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.

9.3. Size:372K cet
cem3172.pdf

CEM3172N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 8.9A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

9.4. Size:387K cet
cem3178.pdf

CEM3178PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS T

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