CEM8968 Todos los transistores

 

CEM8968 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM8968

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7(6.2) A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 140(240) pF

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: SO8

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CEM8968 Datasheet (PDF)

1.1. cem8968.pdf Size:539K _cet

CEM8968
CEM8968

CEM8968 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 30V, 7A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 40m? @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33m? @VGS = -10V. RDS(ON) = 52m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Packa

5.1. cem8958.pdf Size:290K _cet

CEM8968
CEM8968

CEM8958 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 30V, 7A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 40m? @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52m? @VGS = -10V. RDS(ON) = 80m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead free product is acquired. Surface mount Pack

5.2. cem8958a.pdf Size:421K _cet

CEM8968
CEM8968

CEM8958A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 5 30V, 6.8A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 42m? @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58m? @VGS = -10V. RDS(ON) = 85m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Sur

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