CES2302 Todos los transistores

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CES2302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CES2302

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 0.072 Ohm

Empaquetado / Estuche: SOT23

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CES2302 Datasheet (PDF)

1.1. ces2302.pdf Size:405K _cet

CES2302
CES2302

CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72m? @VGS = 4.5V. RDS(ON) = 110m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage

4.1. ces2309.pdf Size:133K _cet

CES2302
CES2302

CES2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -2.2A, RDS(ON) = 165m? @VGS = -4.5V. RDS(ON) = 300m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drai

4.2. ces2305.pdf Size:265K _cet

CES2302
CES2302

CES2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4A, RDS(ON) = 55m? @VGS = -10V. RDS(ON) = 70m? @VGS = -4.5V. RDS(ON) = 120m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Pa

4.3. ces2308(esd).pdf Size:156K _cet

CES2302
CES2302

CES2308 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 5.4A, RDS(ON) = 27m? @VGS = 4.5V. RDS(ON) = 36m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

4.4. ces2306.pdf Size:560K _cet

CES2302
CES2302

CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60m? @VGS = 4.5V. RDS(ON) = 70m? @VGS = 2.5V. RDS(ON) = 100m? @VGS = 1.8V. High dense cell design for extremely low RDS(ON). D Lead free product is acquired. Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limi

4.5. ces2303.pdf Size:132K _cet

CES2302
CES2302

CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.9A, RDS(ON) = 150m? (typ) @VGS = -10V. RDS(ON) = 230m? (typ) @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain

4.6. ces2301.pdf Size:845K _cet

CES2302
CES2302

CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100m? @VGS = -4.5V. RDS(ON) = 150m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vol

4.7. ces2307a.pdf Size:424K _cet

CES2302
CES2302

CES2307A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

4.8. ces2307.pdf Size:402K _cet

CES2302
CES2302

CES2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

Otros transistores... CEM8958 , CEM8958A , CEM8968 , CEM9436A , CEM9926A , CEM9935A , CEM9936A , CEN7002A , IRF840 , CES2306 , CES2308 , CES2310 , CES2312 , CES2314 , CES2316 , CES2320 , CES2324 .

 


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