CEH2321 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEH2321
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 4.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 252 pF
Resistencia drenaje-fuente RDS(on): 0.055 Ohm
Empaquetado / Estuche: TSOP6
Búsqueda de reemplazo de MOSFET CEH2321
CEH2321 Datasheet (PDF)
1.1. ceh2321a.pdf 
Size:447K _cet
CEH2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55m? @VGS = -4.5V. RDS(ON) = 62m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Para
1.2. ceh2321.pdf Size:227K _cet
CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55m? @VGS = -4.5V. RDS(ON) = 80m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit
5.1. ceh2331.pdf Size:428K _cet
CEH2331 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.2A , RDS(ON) = 48m? @VGS = -4.5V. RDS(ON) = 60m? @VGS = -2.5V. RDS(ON) = 78m? @VGS = -1.8V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C u
5.2. ceh2305.pdf Size:302K _cet
CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52m? @VGS = -10V. RDS(ON) = 65m? @VGS = -4.5V. RDS(ON) = 119m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C u
5.3. ceh2313.pdf Size:340K _cet
CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit U
5.4. ceh2310.pdf Size:1163K _cet
CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33m? @VGS = 10V. RDS(ON) = 38m? @VGS = 4.5V. RDS(ON) = 50m? @VGS = 2.5V. RDS(ON) = 60m? @VGS = 1.8V. D(1,2,5,6,) High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. 4 5 TSOP-6 package. 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RA
5.5. ceh2316.pdf Size:164K _cet
CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 50m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units
Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
