CEM4311 Todos los transistores

 

CEM4311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM4311
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 9.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 285 pF
   Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
   Paquete / Cubierta: SO8

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CEM4311 Datasheet (PDF)

 ..1. Size:387K  cet
cem4311.pdf

CEM4311 CEM4311

CEM4311P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 ..2. Size:833K  cn vbsemi
cem4311.pdf

CEM4311 CEM4311

CEM4311www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

 9.1. Size:241K  cet
cem4308.pdf

CEM4311 CEM4311

CEM4308Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.2. Size:411K  cet
cem4301.pdf

CEM4311 CEM4311

CEM4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -6A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

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