CEM4311 Todos los transistores

 

CEM4311 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM4311
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 285 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET CEM4311

 

Principales características: CEM4311

 ..1. Size:387K  cet
 cem4311.pdf pdf_icon

CEM4311

CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 ..2. Size:833K  cn vbsemi
 cem4311.pdf pdf_icon

CEM4311

CEM4311 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G

 9.1. Size:241K  cet
 cem4308.pdf pdf_icon

CEM4311

CEM4308 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 40V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.2. Size:411K  cet
 cem4301.pdf pdf_icon

CEM4311

CEM4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

MOSTRAR MÁS

Otros transistores... CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , 2N60 , CEM4435A , CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 .

 

 
Back to Top

 


 
.