CEP15P15 Todos los transistores

 ..1. Size:349K  cet
 cef15p15 cep15p15 ceb15p15.pdf

CEP15P15/CEB15P15 CEF15P15 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP15P15 -150V 0.24 -15A -10V CEB15P15 -150V 0.24 -15A -10V CEF15P15 -150V 0.24 -15A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP

 8.1. Size:668K  ncepower
 ncep15p30a.pdf

http //www.ncepower.com NCEP15P30A NCE P-Channel Super Trench Power MOSFET Description The NCEP15P30A uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-150V,I =-30A DS D switching performance. Both conduction and switching power R =83m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely lo

 8.2. Size:620K  ncepower
 ncep15p30ak.pdf

http //www.ncepower.com NCEP15P30AK NCE P-Channel Super Trench Power MOSFET Description The NCEP15P30AK uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-150V,I =-29.5A DS D switching performance. Both conduction and switching power R =90m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremel

 9.1. Size:387K  1
 ncep1520k.pdf

Pb Free Product http //www.ncepower.com NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.2. Size:395K  cet
 cep15a03 ceb15a03.pdf

CEP15A03/CEB15A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 190A, RDS(ON) = 4.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

 9.3. Size:1260K  ncepower
 ncep1580gu.pdf

http //www.ncepower.com NCEP1580GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1580GU uses Super Trench technology that is V =150V,I =80A DS D uniquely optimized to provide the most efficient high R =12.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching

 9.4. Size:347K  ncepower
 ncep1505s.pdf

http //www.ncepower.com NCEP1505S NCE N-Channel Super Trench Power MOSFET Description The NCEP1505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 9.5. Size:532K  ncepower
 ncep1580d.pdf

http //www.ncepower.com NCEP1580D NCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 9.6. Size:349K  ncepower
 ncep1520g.pdf

http //www.ncepower.com NCEP1520G NCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 9.7. Size:426K  ncepower
 ncep1545ag.pdf

http //www.ncepower.com NCEP1545AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi

 9.8. Size:812K  ncepower
 ncep1580f.pdf

http //www.ncepower.com NCEP1580F NCE N-Channel Super Trench Power MOSFET Description The NCEP1580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching

 9.9. Size:357K  ncepower
 ncep1580.pdf

http //www.ncepower.com NCEP1580 NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 9.10. Size:372K  ncepower
 ncep15t14ll.pdf

http //www.ncepower.com NCEP15T14LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre

 9.11. Size:379K  ncepower
 ncep1520bk.pdf

http //www.ncepower.com NCEP1520BK NCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.12. Size:386K  ncepower
 ncep15t14d.pdf

Pb Free Product http //www.ncepower.com NCEP15T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 9.13. Size:441K  ncepower
 ncep1545k.pdf

Pb Free Product http //www.ncepower.com NCEP1545K NCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.14. Size:316K  ncepower
 ncep1570 ncep1570d.pdf

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 9.15. Size:680K  ncepower
 ncep15t10v.pdf

http //www.ncepower.com NCEP15T10V NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP15T10V uses Super Trench technology that is V =150V,I =100A DS D uniquely optimized to provide the most efficient high R =5.7m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching

 9.16. Size:316K  ncepower
 ncep1570d.pdf

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 9.17. Size:354K  ncepower
 ncep15t14.pdf

Pb Free Product http //www.ncepower.com NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f

 9.18. Size:707K  ncepower
 ncep1575gu.pdf

http //www.ncepower.com NCEP1575GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1575GU uses Super Trench technology that is V =150V,I =75A DS D uniquely optimized to provide the most efficient high R =13m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching p

 9.19. Size:349K  ncepower
 ncep1520.pdf

http //www.ncepower.com NCEP1520 NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 9.20. Size:447K  ncepower
 ncep1545g.pdf

http //www.ncepower.com NCEP1545G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow

 9.21. Size:316K  ncepower
 ncep1570.pdf

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 9.22. Size:419K  ncepower
 ncep1520ak.pdf

http //www.ncepower.com NCEP1520AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1520AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.23. Size:987K  ncepower
 ncep1570gu.pdf

http //www.ncepower.com NCEP1570GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1570GU uses Super Trench technology that is V =150V,I =70A DS D uniquely optimized to provide the most efficient high R =13.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching

 9.24. Size:699K  ncepower
 ncep1545a.pdf

http //www.ncepower.com NCEP1545A NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =22m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =28m (typical) @ V =4.5V DS(ON) GS switching power losses ar

 9.25. Size:802K  ncepower
 ncep15t18t.pdf

http //www.ncepower.com NCEP15T18T NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =150V,I =180A DS D switching performance. Both conduction and switching power R =4.45m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

 9.26. Size:741K  ncepower
 ncep1545ak.pdf

http //www.ncepower.com NCEP1545AK NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =26m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =30m (typical) @ V =4.5V DS(ON) GS switching power losses a

 9.27. Size:2049K  ncepower
 ncep15t14t.pdf

http //www.ncepower.com NCEP15T14T NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switchi

 9.28. Size:727K  ncepower
 ncep15t26ll.pdf

http //www.ncepower.com NCEP15T26LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =150V,I =255A DS D switching performance. Both conduction and switching power R =4.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

 9.29. Size:391K  ncepower
 ncep1520k.pdf

Pb Free Product http //www.ncepower.com NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi