CES2309 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CES2309P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -2.2A, RDS(ON) = 165m @VGS = -4.5V. RDS(ON) = 300m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Unit

CES2307P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sourc

CES2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.8A, RDS(ON) = 100m @VGS = -4.5V. RDS(ON) = 150m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sou

CES2302N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 3.0A, RDS(ON) = 72m @VGS = 4.5V. RDS(ON) = 110m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source V

CES2303P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -1.9A, RDS(ON) = 150m (typ) @VGS = -10V. RDS(ON) = 230m (typ) @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

CES2308N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 5.4A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 36m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable. DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrai

CES2306N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 3.6A, RDS(ON) = 60m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V. RDS(ON) = 100m @VGS = 1.8V.High dense cell design for extremely low RDS(ON).DLead free product is acquired.Rugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Sy

CES2308N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 5.4A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 36m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable. DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrai

CES2307AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain

CES2305P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4A, RDS(ON) = 55m @VGS = -10V. RDS(ON) = 70m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).DRugged and reliable.Lead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

CES2307www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

CES2301www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

CES2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C