CES2313A Todos los transistores

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CES2313A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CES2313A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 135 pF

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Empaquetado / Estuche: SOT23

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CES2313A Datasheet (PDF)

1.1. ces2313a.pdf Size:409K _cet

CES2313A
CES2313A

CES2313A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.8A, RDS(ON) = 55m? @VGS = -10V. RDS(ON) = 86m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

3.1. ces2313.pdf Size:386K _cet

CES2313A
CES2313A

CES2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.6A, RDS(ON) = 60m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltag

4.1. ces2314.pdf Size:139K _cet

CES2313A
CES2313A

CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50m? @VGS = 10V. RDS(ON) = 70m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS

4.2. ces2316.pdf Size:141K _cet

CES2313A
CES2313A

CES2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 50m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VD

4.3. ces2317.pdf Size:390K _cet

CES2313A
CES2313A

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. RDS(ON) = 120m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Sy

4.4. ces2312.pdf Size:275K _cet

CES2313A
CES2313A

CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V

4.5. ces2310.pdf Size:1084K _cet

CES2313A
CES2313A

CES2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 38m? @VGS = 4.5V. RDS(ON) = 50m? @VGS = 2.5V. RDS(ON) = 60m? @VGS = 1.8V. D High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

Otros transistores... CEP95P04 , CES2301 , CES2303 , CES2305 , CES2307 , CES2307A , CES2309 , CES2313 , 2N7000 , CES2317 , CES2321 , CES2321A , CES2323 , CES2331 , CET4301 , CET4435A , CET6601 .

 


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