CES2321 Todos los transistores

 ..1. Size:378K  cet
 ces2321.pdf

CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

 ..2. Size:871K  cn vbsemi
 ces2321.pdf

CES2321 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 0.1. Size:365K  cet
 ces2321a.pdf

CES2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 75m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit

 8.1. Size:919K  cet
 ces2322.pdf

CES2322 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 6.2A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units

 8.2. Size:387K  cet
 ces2323.pdf

CES2323 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.2A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

 8.3. Size:453K  cet
 ces2324.pdf

CES2324 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.2A, RDS(ON) = 45m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vo

 8.4. Size:478K  cet
 ces2320.pdf

CES2320 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.2A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vol

 8.5. Size:1706K  cn vbsemi
 ces2324.pdf

CES2324 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C