CEU20P10 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEU20P10 datasheet

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ced20p10 ceu20p10.pdf pdf_icon

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

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ced20p06 ceu20p06.pdf pdf_icon

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE

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ced20n02 ceu20n02.pdf pdf_icon

CED20N02/CEU20N02 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 18A, RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI

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ceu20n06.pdf pdf_icon

CEU20N06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

Otros transistores... CET4435A , CET6601 , CET6861 , CET9435A , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 , 8205A , CEU2303 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 , CEU4311 , CEU6601 .