KTJ6131V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTJ6131V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
Paquete / Cubierta: VSM
KTJ6131V Datasheet (PDF)
ktj6131v.pdf

KTJ6131VSEMICONDUCTORP CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES E2.5 Gate Drive.BLow Threshold Voltage : Vth=-0.5-1.5V.High Speed. DIM MILLIMETERS2Small Package. _A 1.2 +0.05_B 0.8 +0.05Enhancement-Mode.13_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05
ktj6131e.pdf

KTJ6131ESEMICONDUCTORP CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES B2.5 Gate Drive. DIM MILLIMETERS_+A 1.60 0.10DLow Threshold Voltage : Vth=-0.5 -1.5V._2 B 0.85 0.10+_+C 0.70 0.10High Speed. 31D 0.27+0.10/-0.05_Small Package. +E 1.60 0.10_+G 1.00 0.10
ktj6164s.pdf

KTJ6164SSEMICONDUCTORP CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.202.5 Gate Drive.B 1.30+0.20/-0.15C 1.30 MAXLow Threshold Voltage : Vth=-0.5-1.5V.23 D 0.40+0.15/-0.05High Speed. E 2.40+0.30/-0.201G 1.90Small Package. H 0.
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 35N06 | RJK1557DPA
History: 35N06 | RJK1557DPA



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