KMA2D4P20SA Todos los transistores

 

KMA2D4P20SA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KMA2D4P20SA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.083 Ohm

Encapsulados: SOT23

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KMA2D4P20SA datasheet

 ..1. Size:55K  kec
kma2d4p20sa.pdf pdf_icon

KMA2D4P20SA

SEMICONDUCTOR KMA2D4P20SA TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. E FEATURES B VDSS=-20V, ID=-2.4A. DIM MILLIMETERS _ A 2.926 0.05 + Drain-Source ON Resistance. _ B 1.626 0.05 + C 1.25 MAX RDS(ON)=100m (Max.) @ VGS=-4.5V. 2 3 _ D 0.40 + 0.05 _ E 2.80 + 0.15 RDS(ON)=175m (M

 9.1. Size:50K  kec
kma2d8p20x.pdf pdf_icon

KMA2D4P20SA

SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. D H FEATURES J VDSS=-20V, ID=-2.8A. E Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=90m (Max.) @ VGS=-4.5V A _ 3.00 0.15 A + F RDS(ON)=150m (Max.) @ VGS=-2.5V _ 1.65 0.1 + B _ + 2.85 0.2 C

 9.2. Size:421K  kec
kma2d7dp20x.pdf pdf_icon

KMA2D4P20SA

SEMICONDUCTOR KMA2D7DP20X TECHNICAL DATA Dual P-CH Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. A G FEATURES 6 4 C VDSS=-20V, ID=-2.7A. F B1 B F1 Drain-Source ON Resistance. 1 3 RDS(ON)=100m (Max.) @ VGS=-4.5V. DIM MILLIMETERS RDS(ON)=175m (Max.) @ VGS=-2.5V. _ 3.05 + 0.1 A E _ 2.85 + 0.15 B _ 1

 9.3. Size:418K  kec
kma2d0dp20x.pdf pdf_icon

KMA2D4P20SA

SEMICONDUCTOR KMA2D0DP20X TECHNICAL DATA Dual P-CH Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. A F 6 4 C B1 B E FEATURES 1 3 VDSS=-20V, ID=-2.0A. DIM MILLIMETERS Drain-Source ON Resistance. _ 2.926 + 0.05 A G RDS(ON)=130m (Max.) @ VGS=-4.5V. _ B 2.80 + 0.15 _ B1 1.626 + 0.05 RDS(ON)=190m (Max.) @

Otros transistores... KTK5164S , KTK5164U , KF70N06F , KF70N06P , KF80N08F , KF80N08P , KMA010P20Q , KMA2D0DP20X , 4N60 , KMA2D7DP20X , KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q .

 

 

 


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