KMA2D4P20SA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KMA2D4P20SA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.083 Ohm
   Paquete / Cubierta: SOT23

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KMA2D4P20SA Datasheet (PDF)

..1. Size:55K kec
kma2d4p20sa.pdf

SEMICONDUCTOR KMA2D4P20SATECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.EFEATURES BVDSS=-20V, ID=-2.4A. DIM MILLIMETERS_A 2.926 0.05+Drain-Source ON Resistance._B 1.626 0.05+C 1.25 MAX: RDS(ON)=100m (Max.) @ VGS=-4.5V.23 _D0.40 + 0.05_E2.80 + 0.15: RDS(ON)=175m (M

9.1. Size:50K kec
kma2d8p20x.pdf

SEMICONDUCTOR KMA2D8P20XTECHNICAL DATA P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for battery pack or power management in cell phone,and PDA.DHFEATURES JVDSS=-20V, ID=-2.8A.EDrain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=90m(Max.) @ VGS=-4.5VA_3.00 0.15A +F: RDS(ON)=150m(Max.) @ VGS=-2.5V _1.65 0.1+B_+2.85 0.2C

9.2. Size:421K kec
kma2d7dp20x.pdf

SEMICONDUCTOR KMA2D7DP20XTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.AGFEATURES 6 4 CVDSS=-20V, ID=-2.7A.FB1 B F1Drain-Source ON Resistance.1 3: RDS(ON)=100m (Max.) @ VGS=-4.5V.DIM MILLIMETERS: RDS(ON)=175m (Max.) @ VGS=-2.5V._3.05 + 0.1AE_2.85 + 0.15B_1

9.3. Size:418K kec
kma2d0dp20x.pdf

SEMICONDUCTOR KMA2D0DP20XTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.AF6 4 CB1 B EFEATURES 1 3VDSS=-20V, ID=-2.0A.DIM MILLIMETERSDrain-Source ON Resistance._2.926 + 0.05AG: RDS(ON)=130m (Max.) @ VGS=-4.5V. _B 2.80 + 0.15_B1 1.626 + 0.05: RDS(ON)=190m (Max.) @

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