KMA2D8P20X MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KMA2D8P20X datasheet

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SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. D H FEATURES J VDSS=-20V, ID=-2.8A. E Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=90m (Max.) @ VGS=-4.5V A _ 3.00 0.15 A + F RDS(ON)=150m (Max.) @ VGS=-2.5V _ 1.65 0.1 + B _ + 2.85 0.2 C

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SEMICONDUCTOR KMA2D7DP20X TECHNICAL DATA Dual P-CH Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. A G FEATURES 6 4 C VDSS=-20V, ID=-2.7A. F B1 B F1 Drain-Source ON Resistance. 1 3 RDS(ON)=100m (Max.) @ VGS=-4.5V. DIM MILLIMETERS RDS(ON)=175m (Max.) @ VGS=-2.5V. _ 3.05 + 0.1 A E _ 2.85 + 0.15 B _ 1

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SEMICONDUCTOR KMA2D0DP20X TECHNICAL DATA Dual P-CH Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. A F 6 4 C B1 B E FEATURES 1 3 VDSS=-20V, ID=-2.0A. DIM MILLIMETERS Drain-Source ON Resistance. _ 2.926 + 0.05 A G RDS(ON)=130m (Max.) @ VGS=-4.5V. _ B 2.80 + 0.15 _ B1 1.626 + 0.05 RDS(ON)=190m (Max.) @

9.3. Size:55K kec
kma2d4p20sa.pdf pdf_icon

SEMICONDUCTOR KMA2D4P20SA TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. E FEATURES B VDSS=-20V, ID=-2.4A. DIM MILLIMETERS _ A 2.926 0.05 + Drain-Source ON Resistance. _ B 1.626 0.05 + C 1.25 MAX RDS(ON)=100m (Max.) @ VGS=-4.5V. 2 3 _ D 0.40 + 0.05 _ E 2.80 + 0.15 RDS(ON)=175m (M

Otros transistores... KF70N06F , KF70N06P , KF80N08F , KF80N08P , KMA010P20Q , KMA2D0DP20X , KMA2D4P20SA , KMA2D7DP20X , IRF1407 , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , KMB010P30QA .