KMB012N30Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KMB012N30Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: FLP-8

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KMB012N30Q Datasheet (PDF)

..1. Size:462K kec
kmb012n30q.pdf

SEMICONDUCTOR KMB012N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=12A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=7m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=11

0.1. Size:803K kec
kmb012n30qa.pdf

SEMICONDUCTOR KMB012N30QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=12A.DIM MILLIMETERSDrain to Source On Resis

7.1. Size:395K kec
kmb012n40da.pdf

SEMICONDUCTOR KMB012N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and Power LC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70 +

9.1. Size:57K kec
kmb010p30qa.pdf

SEMICONDUCTOR KMB010P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Battery pack. HTD PG LFEATURES AVDSS=-30V, ID=-10A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2B1 _

9.2. Size:58K kec
kmb014p30qa.pdf

SEMICONDUCTOR KMB014P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Battery pack. HTD PG LFEATURES AVDSS=-30V, ID=-14A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2B1 _

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