KMB4D5NP55Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KMB4D5NP55Q
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5(3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9.4(14.3) nS
   Cossⓘ - Capacitancia de salida: 67(75) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04(0.085) Ohm
   Paquete / Cubierta: FLP8

Búsqueda de reemplazo de MOSFET KMB4D5NP55Q

KMB4D5NP55Q Datasheet (PDF)

..1. Size:389K kec
kmb4d5np55q.pdf

SEMICONDUCTOR KMB4D5NP55QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES N-ChannelA: VDSS=55V, ID=4.5A.DIM MILLIMETERS: RDS(ON)=60m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=95m (Max.) @

8.1. Size:51K kec
kmb4d5dn60qa.pdf

SEMICONDUCTOR KMB4D5DN60QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for load switch and Back light inverter. HTD PG LFEATURES AVDSS=60V, ID=4.5A.DIM MILLIMETERSA _+Drain-Source ON

9.1. Size:369K kec
kmb4d8dn55q.pdf

SEMICONDUCTOR KMB4D8DN55QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=55V, ID=4.8A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=50m (Max.) @ VGS=10V_3

9.2. Size:57K kec
kmb4d0n30sa.pdf

SEMICONDUCTOR KMB4D0N30SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for portable equipment.L B LDIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAXFEATURES 23 D 0.40+0.15/-0.05

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: