FDP6030BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP6030BL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 12 nC
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO220
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FDP6030BL Datasheet (PDF)
fdp6030bl fdb6030bl.pdf

July 2000FDP6030BL/FDB6030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Critical DC elect
fdp6030bl fdb6030bl.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp6030l fdb6030l.pdf

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr
fdp6035l fdb6035l.pdf

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic
Otros transistores... FDN358P , FDN359AN , FDN360P , FDN361AN , FDP4020P , FDP4030L , FDP5680 , FDP5690 , IRFZ44N , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L .



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