FDP6030BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP6030BL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO220

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FDP6030BL Datasheet (PDF)

..1. Size:90K fairchild semi
fdp6030bl fdb6030bl.pdf

July 2000FDP6030BL/FDB6030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Critical DC elect

..2. Size:203K onsemi
fdp6030bl fdb6030bl.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:94K fairchild semi
fdp6030l fdb6030l.pdf

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr

8.1. Size:407K fairchild semi
fdp6035l fdb6035l.pdf

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic

8.2. Size:408K fairchild semi
fdp603al fdb603al.pdf

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 VRDS(ON) = 0.036 @ VGS=4.5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritica

8.3. Size:192K fairchild semi
fdp6035al fdb6035al.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Otros transistores... FDN358P , FDN359AN , FDN360P , FDN361AN , FDP4020P , FDP4030L , FDP5680 , FDP5690 , IRFZ44N , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L .

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