KMB7D0N40QA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMB7D0N40QA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 117 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: FLP8
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KMB7D0N40QA Datasheet (PDF)
kmb7d0n40qa.pdf

SEMICONDUCTOR KMB7D0N40QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in pc, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _+VDSS=4
kmb7d0np30qa.pdf

SEMICONDUCTOR KMB7D0NP30QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for Back-light Inverter.HTD PG LFEATURES N-ChannelA: VDSS=30V, ID=7A.DIM MILLIMETERSA _+: RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2B1 _3.94 + 0.2: RDS(ON)=39m (Max.) @ VGS=4.5VB2 _6.02+ 0.38 5D _
kmb7d0np30q.pdf

SEMICONDUCTOR KMB7D0NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7A.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V_3.90 + 0.3B18 5 _
kmb7d0dn40q.pdf

SEMICONDUCTOR KMB7D0DN40QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=40V, ID=7A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V _3.90
Otros transistores... KMB5D0NP40Q , KMB5D5NP30Q , KMB6D0DN30QA , KMB6D0DN35QA , KMB6D0NP40QA , KMB6D6N30Q , KMB7D0DN40Q , KMB7D0DN40QA , IRF3205 , KMB7D0NP30Q , KMB7D0NP30QA , KMB7D1DP30QA , KMB7D6NP30Q , KMB8D0P30Q , KMB8D2N60QA , KMC7D0CN20C , KMC7D0CN20CA .
History: RU40120L | SSB65R190S2 | SIS472ADN | STB25NM50N-1 | SSF60R190S2E | WPMD2011 | WPM3407
History: RU40120L | SSB65R190S2 | SIS472ADN | STB25NM50N-1 | SSF60R190S2E | WPMD2011 | WPM3407



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