KML0D3P20V Todos los transistores

 

KML0D3P20V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KML0D3P20V
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: VSM
 

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KML0D3P20V Datasheet (PDF)

 ..1. Size:760K  kec
 kml0d3p20v.pdf pdf_icon

KML0D3P20V

SEMICONDUCTOR KML0D3P20VTECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Cell Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=-20V, ID=-0.3ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS=-4.5V: RDS(ON)=1.6 @ VGS=-2.5V: RDS(ON)=2.7 @ VGS=-1.8VMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL P-Ch UNITMar

 9.1. Size:59K  kec
 kml0d6np20ea.pdf pdf_icon

KML0D3P20V

SEMICONDUCTOR KML0D6NP20EATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionIts Mainly Suitable for Load Switching Cell Phones, Battery PoweredBSystems and Level-Shifter.B11 6 DIM MILLIMETERS_A 1.6 + 0.05FEATURES _A1 1.0 + 0.052 5_N-ChannelB 1.6 + 0.05_B1 1.2 + 0.05: VDSS=20V, ID=600mA (RDS(ON)=0.70 @ VGS=4.5V).C 0.503 4_D 0.2 + 0.05

 9.2. Size:783K  kec
 kml0d4p20e.pdf pdf_icon

KML0D3P20V

SEMICONDUCTOR KML0D4P20ETECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS= -20V, ID= -0.35ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V: RDS(ON)=1.6 @ VGS= -2.5V: RDS(ON)=2.7 @ VGS= -1.8VESD Protection diode.MAXIMUM RATING (Ta=25)CHA

 9.3. Size:771K  kec
 kml0d4n20e.pdf pdf_icon

KML0D3P20V

SEMICONDUCTOR KML0D4N20ETECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=20V, ID=0.4ADrain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V: RDS(ON)=0.85 @ VGS=2.5V: RDS(ON)=1.25 @ VGS=1.8VSuper High Dense Cell DesignMAXIMUM RATING (Ta=25)CHAR

MOSTRAR MÁS

Otros transistores... KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , K3569 , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F , KU086N10P , KU310N10D , KU310N10P , KF10N60F .

 

 
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