KF10N60F Todos los transistores

 

KF10N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KF10N60F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.59 Ohm

Encapsulados: TO220IS

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KF10N60F datasheet

 ..1. Size:395K  kec
 kf10n60p kf10n60f.pdf pdf_icon

KF10N60F

KF10N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power su

 7.1. Size:413K  kec
 kf10n60p-f.pdf pdf_icon

KF10N60F

KF10N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power su

 8.1. Size:384K  kec
 kf10n68f.pdf pdf_icon

KF10N60F

KF10N68F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

 8.2. Size:381K  kec
 kf10n65f.pdf pdf_icon

KF10N60F

KF10N65F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

MOSTRAR MÁS

Otros transistores... KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F , KU086N10P , KU310N10D , KU310N10P , AO3401 , KF10N60P , KF10N68F , KF11N50F , KF11N50P , KF12N60F , KF12N60P , KF12N68F , KF13N50F .

 

 

 

 

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