FDP603AL Todos los transistores

 

FDP603AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP603AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 102 nS
   Cossⓘ - Capacitancia de salida: 345 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO220

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FDP603AL Datasheet (PDF)

 ..1. Size:408K  fairchild semi
fdp603al fdb603al.pdf

FDP603AL
FDP603AL

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 VRDS(ON) = 0.036 @ VGS=4.5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritica

 8.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdf

FDP603AL
FDP603AL

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic

 8.2. Size:192K  fairchild semi
fdp6035al fdb6035al.pdf

FDP603AL
FDP603AL

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 8.3. Size:94K  fairchild semi
fdp6030l fdb6030l.pdf

FDP603AL
FDP603AL

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr

 8.4. Size:90K  fairchild semi
fdp6030bl fdb6030bl.pdf

FDP603AL
FDP603AL

July 2000FDP6030BL/FDB6030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Critical DC elect

 8.5. Size:203K  onsemi
fdp6030bl fdb6030bl.pdf

FDP603AL
FDP603AL

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDP4020P , FDP4030L , FDP5680 , FDP5690 , FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , 50N06 , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , FDR8305N .

 

 
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