KF12N60P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF12N60P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 215 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 185 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.51 Ohm
Encapsulados: TO220AB
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KF12N60P datasheet
kf12n60p kf12n60f.pdf
KF12N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF12N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ + correction and switching mode power
kf12n60p-f.pdf
KF12N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=
kf12n68f.pdf
KF12N68F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli
Otros transistores... KU310N10D , KU310N10P , KF10N60F , KF10N60P , KF10N68F , KF11N50F , KF11N50P , KF12N60F , K4145 , KF12N68F , KF13N50F , KF13N50P , KF16N50F , KF1N60D , KF1N60I , KF1N60L , KF2N60D .
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