KF2N60I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF2N60I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 35 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Encapsulados: IPAK
Búsqueda de reemplazo de KF2N60I MOSFET
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KF2N60I datasheet
kf2n60p-f.pdf
KF2N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF2N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9
kf2n60l.pdf
KF2N60L SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description B D DIM MILLIMETERS This planar stripe MOSFET has better characteristics, such as fast A 7.20 MAX switching time, low on resistance, low gate charge and excellent B 5.20 MAX C 0.60 MAX avalanche characteristics. It is mainly suitable for switching mode P D 2.50 MAX DEPTH 0.2 E 1.15 MAX
kf2n60d-i.pdf
KF2N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF2N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 power supplies.
Otros transistores... KF13N50F , KF13N50P , KF16N50F , KF1N60D , KF1N60I , KF1N60L , KF2N60D , KF2N60F , NCEP15T14 , KF2N60L , KF2N60P , KF3N40D , KF3N40I , KF3N40W , KF3N50DS , KF3N50DZ , KF3N50FS .
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