FDP7030BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP7030BL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220

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FDP7030BL Datasheet (PDF)

..1. Size:412K fairchild semi
fdp7030bl fdb7030bl.pdf

July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0120 @ VGS = 4.5 V.converters using either synchronous or conventional Critical DC electrical parameters spec

..2. Size:112K fairchild semi
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October 2003FDP7030BL/FDB7030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 12 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec

..3. Size:227K onsemi
fdp7030bl fdb7030bl.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:385K fairchild semi
fdp7030l.pdf

April 1998 FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 VRDS(ON) = 0.010 @ VGS=5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritical

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fdp7045l fdb7045l.pdf

March 2004FDP7045L/FDB7045LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 100 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 6.0 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec

Otros transistores... FDP5680 , FDP5690 , FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , IRF540 , FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P .

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