FDP7030BL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP7030BL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO220

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FDP7030BL datasheet

 ..1. Size:412K  fairchild semi
 fdp7030bl fdb7030bl.pdf pdf_icon

FDP7030BL

July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0120 @ VGS = 4.5 V. converters using either synchronous or conventional Critical DC electrical parameters spec

 ..2. Size:112K  fairchild semi
 fdp7030bl fdb7030bl .pdf pdf_icon

FDP7030BL

October 2003 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 12 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC elec

 ..3. Size:227K  onsemi
 fdp7030bl fdb7030bl.pdf pdf_icon

FDP7030BL

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:385K  fairchild semi
 fdp7030l.pdf pdf_icon

FDP7030BL

April 1998 FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 V RDS(ON) = 0.010 @ VGS=5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critical

MOSTRAR MÁS

Otros transistores... FDP5680, FDP5690, FDP6030BL, FDP6030L, FDP6035AL, FDP6035L, FDP603AL, FDP6670AL, IRF540, FDP7030L, FDP7045L, FDP8030L, FDR4410, FDR4420A, FDR8305N, FDR8308P, FDR836P