KF5N50FSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF5N50FSA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 37.9 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 71 pF
Resistencia entre drenaje y fuente RDS(on): 1.15 Ohm
Paquete / Cubierta: TO220IS
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KF5N50FSA Datasheet (PDF)
kf5n50f.pdf
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KF5N50PR/FR/PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PR, KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic
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KF5N50FZA/FSASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS=
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