KF5N53D Todos los transistores

 

KF5N53D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KF5N53D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 59.5 W

Tensión drenaje-fuente |Vds|: 525 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 4.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 65 pF

Resistencia drenaje-fuente RDS(on): 1.35 Ohm

Empaquetado / Estuche: DPAK

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KF5N53D Datasheet (PDF)

0.1. kf5n53d i.pdf Size:386K _kec

KF5N53D
KF5N53D

KF5N53D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N53DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20ele

0.2. kf5n53dz ds.pdf Size:382K _kec

KF5N53D
KF5N53D

KF5N53DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic

 8.1. kf5n53fs.pdf Size:1030K _kec

KF5N53D
KF5N53D

KF5N53FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS= 525V

8.2. kf5n53f.pdf Size:1030K _kec

KF5N53D
KF5N53D

KF5N53FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS= 525V,

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